Abstract
The theoretical analysis of the linear pulse responses of homostructure GaAs conventional and resonant cavity-enhanced(RCE) Schottky photodiodes is presented in this paper. Theresults have been obtained by numerical simulation of thecomplete phenomenological model for a two-valley semiconductor.Besides the drift, as the dominant mechanism of the transport,the model takes into account the diffusion, the influence ofthe electric field due to the spatial and temporalredistribution of the photogenerated carriers within theabsorption layer, the influence of the parasitic time constantand the electron intervalley transfer. The behaviour of thebandwidths and bandwidth-quantum efficiency products when theactive area, the width of the absorption layer and the reversebias voltage change has been investigated. It is shown that conventional and RCE Schottky photodiodes with exactly the sameoperating parameters have practically identical frequencyresponses, i.e. bandwidths. For certain thicknesses of theabsorption layer the bandwidth-quantum efficiency products havebeen increased more than fivefold. In comparison with the RCEP-i-N photodetectors having the same operating parameters, theRCE Schottky photodiodes exhibited approximately twofoldincreased bandwidths.
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