Abstract
We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8×1010 and 1×1010 cm Hz1/2 W−1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was <44 nm and the quality factor ∼80. The peak quantum efficiency was >60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.
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