Abstract

In this article we report about the investigation of two-dimensional electromagnetic band-gap structures in a slab arrangement for millimeter wave frequencies made from high resistive silicon. We investigated both waveguiding modes of a line defect and resonant modes of a point defect with respect to a possible application as passive elements in millimeter wave integrated circuits. We found that a line defect can act as a broadband waveguide comprising low transmission losses and that localized point defect modes can be excited. In accordance with recent observations at optical frequencies, the quality factor of such a defect mode was found to be affected by the local displacement of certain lattice elements near the point defect.

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