Abstract
Charge transport through SiO2∕Si∕SiO2 double-barrier structures (DBSs) and SiO2 single-barrier structures is investigated by low temperature I-V measurements. Resonant tunneling signatures accompanied by a negative differential conductance are observed if silicon quantum dots (Si QDs) are embedded in the amorphous SiO2 matrix. The I-V characteristics are correlated with the morphology of Si QDs extracted from transmission electron microscopy and photoluminescence. Evidence for phonon-assisted tunneling at low voltages has been found in the DBSs. These results show the potential but also the limitation for charge extraction from Si QDs embedded in SiO2.
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