Abstract
The electronic structure of the impurity d-levels of interstitial Mn i in a GaAs quantum well (QW) is found to create deeply bound donor states located within the band gap. This behavior results from lowering the symmetry of the band states in 2DEG, which, in turn, lifts symmetry bans on the hybridization matrix elements. An impurity-assisted tunneling current is enabled by discrete bound donor states with energies located below the first conduction QW subband.
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