Abstract
Spin-polarized transmission is calculated for electrons that experience interface elastic and spin-orbit impurity scattering. It is shown that the spin-orbit part of impurity scattering enhances the spin polarization of transmitted electrons and that overbarrier reflection results in resonant spin-polarized transmission. Applied voltage dependence of spin transmission is calculated. This is the prerequisite for the electrically controlled in-plane spin current in a semiconductor structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
