Abstract
We have studied MOCVD-grown In x Al 1− x As films, with x close to 0.52 (lattice matched to InP), by means of low temperature photoluminescence and Resonant Raman (RR) scattering. Besides the E 0 emission at ≈ 1.49 eV, we observe a weak photoluminescence band, B , ∼ 50 meV above the fundamental one. In the Raman spectra, we identify the InAs-like and AlAs-like LO phonons and their overtones and combinations. An enhancement of the Raman efficiency for any of these phonons is observed at photon energies close to the B luminescence band. The resonance maximum red shifts with increasing In composition, according to the In-composition dependence of the E 0 -gap. We suggest that the B luminescence originates from electronic transitions, due either to composition fluctuations through formation of macroscopic clusters or to the presence of resonant impurity states above the fundamental gap.
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