Abstract
The position and shape of the ${E}_{1},\phantom{\rule{0.3em}{0ex}}{E}_{1}+{\ensuremath{\Delta}}_{1}$ Raman resonance depending on the size of unstrained Ge quantum dots were studied. The dots were grown in $\mathrm{Ga}\mathrm{As}∕\mathrm{Zn}\mathrm{Se}∕\mathrm{Ge}∕\mathrm{Zn}\mathrm{Se}$ structures on (111)-oriented GaAs substrates using molecular-beam epitaxy. A shift of the ${E}_{1}$ and ${E}_{1}+{\ensuremath{\Delta}}_{1}$ resonance energies by up to $0.3\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ was observed. The dependence of the shift on quantum dot size was shown to be well described by a cylindrical model using quantization of the bulk Ge electron-hole states that form excitons at the two-dimensional critical point of the interband density of states. A separate display of the ${E}_{1}$ and ${E}_{1}+{\ensuremath{\Delta}}_{1}$ resonances in the quantum dots related to transformation of the interband density of states into the \ensuremath{\delta} function due to quantization of the energy spectrum was observed.
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