Resonance interaction between shallow electron states of donor and acceptor impurities subjected to an extremely strong external magnetic field

Abstract

The two-level theoretical model has been introduced for the investigation of optical transitions of electrons between shallow impurity states close to opposite edges of the forbidden gap under the influence of resonant laser radiation in doped semiconductors of GaAs and InSb type subjected to a strong magnetic field. The initial (non-interacting) form of a single electron energy spectrum and the mode of its wavefunctions have been derived from modified application of an adiabatic method, with the acceptance of a scalar effective mass approximation for both condition and valence bands. In the case of a single electron resonance interaction with an isolated pair of contrarily charged impurity centres the specific features of high-frequency Stark shifts in strong magnetic fields have been investigated, and analytical expressions have been obtained reflecting the dependence of shift magnitudes on magnetic field intensities. A separate consideration of spin magnetic effects has been conducted. In a bulk semiconductor non-homogeneous high-frequency shift of ground state binding energies has been investigated. The mean average energy values of high-frequency shift and Coulomb interaction between impurities have been determined as functions depending on the impurities' concentration and magnetic field intensity.