Abstract
We propose an enhancement of the electron or hole impact ionization coefficients (α or β) by introducing resonant impact ionization states into the (conduction or valence) band by using suitable lattice matched multilayer heterojunctions (superlattices). Model calculations for the AlAs:GaAs superlattice indicate resonance enhancements can occur over a wide range of energy gaps (1.54–1.9 eV). The gap can be varied by choosing the appropriate ratio of the alternating layer thickness. This effect should be useful for improving the signal/noise ratio of avalanche photodiodes significantly.
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