Abstract
We have analyzed the photoluminescence (PL) of thin bulklike GaAs layers under nearly resonant excitation by transform-limited picosecond laser pulses. The PL spectra show clear signatures of polariton effects. Simultaneous excitation of several modes gives rise to structures in the PL time dependence due to polariton interference. In the case of a single polariton mode, we have observed the resonant fluorescence and spectral migration effects, which can be explained in the framework of a forced-harmonic-oscillator model.
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