Abstract
Using the non-equilibrium statistical operator (NSO) method, we have investigated the spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure. We have analyzed the effective parameters approximation, when each of the considered subsystems (conduction electrons, magnons, and phonons) is characterized by its effective temperature. We have constructed the macroscopic equations describing the spin-wave current caused by both the resonantly exciting spin subsystem of conduction electrons and an inhomogeneous temperature field in the ferromagnetic insulator. We have shown that the spin-wave current excitation under combined resonance conditions exhibits a resonant nature.
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