Abstract
A methodology for calculating avalanche multiplication and noise using non local ionisation coefficients is developed. Results are calculated for two electric field values and two features are demonstrated: the well known dead space effect and at the higher field value a resonance effect. The resonance effect gives rise to level sections in the multiplication curve for multiplications of 2, 4, 8 and 16 if the ionization coefficient ratio is small. Also the excess noise factor reduces to almost one at these level sections indicating almost no avalanche noise and a deterministic avalanche process. This result is used to explain the recently observed low excess noise factor in Hg1−xCdxTe avalanche photodiodes.
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