Abstract

ABSTRACTRecent studies of the resonance effect between the wavelength of planar channeled ions and the periodicity of strained-layer superlattices are summarized for MeV 4He ions backscattering from GaAsxP1-X/GaP superlattices. When the incident beam energy is adjusted so the half-wavelength matches the thickness of the layers, a catastrophic dechanneling effect is observed. A simple phase rotation analysis has been developed to calculate the dechanneling in each layer and good agreement is obtained with the observed dechanneling per interface. This resonance effect is used to measure the amount of strain in the GaAsxP1-x/GaP strained-layer superlattice.

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