Abstract
Quasiperiodic peaks of the resistance as a function of gate voltage were observed in submicron rings fabricated on the basis of a two-dimensional electron gas in a GaAs quantum well with the AlAs/GaAs superlattice barriers. In magnetic fields higher than 1 T, the peaks disappeared. The negative magnetoresistance observed in the peak maxima is explained by the magnetic-field-induced suppression of the resonance backscattering that appears in the triangular quantum dots situated in the branching regions of a ring interferometer.
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