Abstract
An experimental and theoretical study of the band-like P L2, 3 VV Auger lineshape for GaP(110) is reported (kinetic energy ≈120 eV). By deposition of one monolayer of Sb (isoelectronic to P) we determine the surface-related Auger lineshape as the difference between the two spectra measured from the as-cleaved surface and the GaP/Sb interface. Theoretical calculations based on a single particle approach including different structural coordination models (i.e. ideally truncated surface, real relaxed surface, ordered Sb overlayer) are performed, which allows to isolate the surface contribution of the L2, 3 VV Auger profile from the bulk related lineshape. Moreover the results of the joint analysis are discussed giving excellent agreement between calculations and measurements and pointing toward an interpretation of the P L VV lineshape in terms of surface structural probe.
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