Abstract

In this work, we study hafnium zirconate (HZO) based ferroelectric (FE) capacitors (FeCAP) intended for random access memory and compute-in-memory (CiM) applications. We show that there exists a discrepancy between the coercive voltages (VC) extracted from a small-signal capacitance–voltage (C-V) measurement ({VC}CV) and dynamic polarization-voltage (P-V) measurement ({VC}PV):|{VC}CV|<|{VC}PV|. Utilizing the Nucleation Limited Switching (NLS) framework, we attribute the origin of this discrepancy to the difference in voltage–time dynamics experienced by the FE during the C-V and P-V measurements, resulting in a higher switching probability at the same applied voltage for a longer time during the C-V measurement: |{VC}CV| <|{VC}PV|. Therefore, experimentally obtained VC values do not solely reflect an intrinsic material property of the FE as they depend on the voltage–time dynamics of the measurement.

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