Abstract
We investigated the feasibility of 1:1 electron stepper lithography based on a patterned cold cathode. We fabricated metal-semiconductor-insulator cold cathodes and measured the energy distribution of the emitted electrons. Based on the finite width of the energy distribution, we simulated the emission of the electron beam from one point on the cold cathode broadens at the wafer surface by solving the equation of motion. The simulation showed that when the energy width was 360 meV, the beam spread was estimated to be approximately 23 nm. This indicates that if we fabricate a 20-nm-wide emission area, the electron beam width on the wafer could be approximately 43 nm. Therefore, we conclude that the 1:1 electron stepper can achieve a 50-nm resolution.
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