Abstract
Alkaline treatment of the photoresist under ultrasonic irradiation has been investigated to improve the resolution capability of resist patterns with higher throughput. The selectively dissolved phenol resin for the combination of the alkaline treatment with ultrasonic irradiation was increased by 2.3 times compared to the solely alkaline treatment. The sensitizing effect of naphthoquinone diazide (sensitizer) based on phenol was increased to 0.46 against dip treatment of 0.31. As a result, resist sensitivity was increased to 26% and the resolution capability was drastically improved. Consequently, the 0.5 μm line and space resist patterns were resolved completely with fine profile by using the photoresist with a 0.7 μm resolution limit together with g-line exposure machine with a 0.6 μm resolution limit. As a consequence, a high throughput of 25 wafers min−1 was achieved, which was more than 25 times higher than that of electron beam lithography.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
