Abstract
We report the creation of 50nm thick epitaxial Cu lines with line widths ranging from 20nm to 120nm on Si(100) substrate using a combination of electron beam lithography, oblique angle deposition, and lift-off techniques. The increase of measured resistivity as a function of decreasing line width is dominated by surface scattering that is completely diffuse. The measured resistivity of the 20nm wide lines is ~4μΩ-cm.
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