Abstract
Ni silicide nanowires have been formed by 2-step annealing process (2-step RTA) as SALICIDE process. All nanowires with width range from 20 to 90 nm are measured their electronic characteristic and revealed drastic increase of resistivity in less than 40 nm area. In this study, a low resistivity was obtained for a little more than 50μΩcm by controlling Ni film thickness and investigated its reason.
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