Resistivity measurement of V 3Si single crystal in the mixed superconducting state

Abstract

Measurements of the resistivity of a V 3Si single crystal in the mixed superconducting state, near the critical temperature T c indicate a sharp peak in the critical field H ¢ for the onset of resistivity. In the (100) direction, H ¢ is approximately five times larger than in the vicinity of this direction, and the width of the peak in H ¢ is approximately 2.5°. The crystal had been subjected to stress of order 50 kg/cm 2 in the (100) direction. A tentative explanation is suggested which takes into account the domain structure caused by the martensitic transformation. The sharp peak and the large anisotropy are attributed to the possibility that the domain walls act as potential barriers to the flux flow.