Resistivity distribution in bulk growth of silicon single crystals

Abstract

The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed. Transient two-dimensional mathematical model including the melt convection of silicon and the mass transfer of dopant impurities has been developed to study the macroscopic longitudinal segregation phenomena in conventional doping and B–P codoping method. Numerical simulations have been performed in horizontal Bridgman silicon growth using the finite element method and implicit Euler time integration. The experimental axial segregation in conventional melt growth process can be described successfully using this model. It has been demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals, and its relatively uniform profile is possible by B–P codoping method.