Resistivity dependence on nanostructure formation in picosecond ablation of silicon and SERS-based sensing applications

Abstract

We report on the influence of resistivity in picosecond (ps) laser ablation of silicon (Si) leading to the formation of diverse surface micro- and nanostructures. Subsequently, we investigated their potential in sensing applications based on the surface enhanced Raman scattering (SERS) technique. The varying resistivity (ρ 1: 1–10 Ω cm, ρ 2: 0.01–0.02 Ω cm, ρ 3: 0.001–0.005 Ω cm) Si wafers were subjected to cross patterned ps laser ablation in ambient air. Ladder-like microstructures embedded with numerous nano growths were formed on low resistivity Si (ρ 3) while similar micro- and nanostructures were observed on higher resistivity Si (ρ 2 < ρ 1). The structures were non-plasmonic and anti-reflecting in nature with an optical reflectance of <6% over a broad range of wavelengths (350–1200 nm). Non-plasmonic Si microstructures were subsequently transformed to plasmonic by means of deposition of a thin layer of gold (Au). Additionally, the effect of annealing on the evolution of nanostructures was also investigated. We employed these hybrid substrates for the trace detection of an explosive molecule, ammonium nitrate, and dye, malachite green. Our detailed SERS studies have demonstrated a superior enhancement in the trace detection of analytes for low resistivity Si substrate. However, the annealed hybrid substrates have demonstrated further improvement in the SERS signal (by at least one order of magnitude). These detailed SERS investigations provide us a proof of the sensitivity of different resistivity Si nano/microstructures.