Abstract
Temperature dependences of the longitudinal and transverse resistivity of YBa2Cu3O7−δ single crystals irradiated with fast electrons are investigated. It is revealed that the ratio of the normal-state resistivity along the c-axis and in the ab-plane, ρc∕ρab, markedly decreases with increase of the number of structural defects induced by the electron irradiation. Importantly, the temperature dependence of the ratio ρc∕ρab can be described well by both, the universal “law of 1/2” for the variable-range hopping conductivity as well as the conventional exponential expression for the thermally activated conductivity.
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