Abstract
The resistivity and Seebeck coefficient of a bismuth microwire array (wire diameter: 25μm) were successfully measured from 25 to 300K. To eliminate the influence of the contact resistance between the wire edges of the microwire array and copper electrodes, the titanium (100nm)/copper (500nm) film layers were deposited as interlayer on the wire edge by ion plating method. Copper electrodes were glued by using Pb–Sn solder. The resistivity and the Seebeck coefficient at 300K were approximately 1.8×10−6Ωm and −54×10−6V/K, respectively. The value of the resistivity and the Seebeck coefficient were in good agreement with those of bulk polycrystalline bismuth reported previously. Thus, the effects of the contact resistance for the microwire array were almost resolved, and the chemical reaction of the Pb–Sn solder and bismuth was prevented by using the thin-film layer. The technique is expected to be applicable to nanowire arrays as well.
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