Resistivity and implantation distribution of hydrogen and helium in metals

Abstract

The resistivity contributions and the widths of the distributions of hydrogen and helium, implanted with energies from 0.125 to 3 keV at 5 K into thin film specimens of tantalum and rhenium, were obtained from resistivity damage rate measurements. The following values of the resistivity contribution per unit concentration of implanted atoms were derived: for tantalum rho H approximately=0.7+or-0.1 mu Omega m and rho He approximately=0.7+or-0.2 mu Omega m; for rhenium rho H=3.0+or-0.5 mu Omega m and rho He= 6+or-1 mu Omega m. These values and data from other metals are related to the resistivities of defects and to thermal resistivities. The widths of the implantation distributions are compared with previous measurements on other metals and with Monte Carlo calculations.