Resistive-switching analogue memory device for neuromorphic application

Abstract

We have investigated the analogue memory characteristics of an oxide-based resistive-switching device under an electrical pulse to mimic biological spike-timing-dependent plasticity (STDP) synapse characteristics. As a synaptic device, a Pr 0.7 Ca 0.3 MnO 3 based resistive — switching device exhibiting excellent analogue memory characteristics was used to control the synaptic weight by applying various pulse amplitudes and cycles. Furthermore, by adopting CMOS devices as neurons and TiN/PCMO devices as synapses, we implemented neuromorphic hardware that mimics associative memory characteristics in real time for the first time. Owing to their excellent scalability, resistive-switching devices, shows promise for future high-density neuromorphic applications.