Abstract
Memristive effects, i.e., changes in the conductivity of a nonlinear two‐terminal device after a voltage or current pulse, are of high interest for applications in novel information technology. A crucial step in controlling memristive effects, particularly in oxide‐based systems, involves the understanding of chemical and redox‐induced changes in the material during resistive switching processes. Depending on the material, the switching may occur in an areal or filamentary fashion. In both cases, the resulting changes need to be monitored by high‐resolution techniques. In this contribution, photoemission microscopy approaches are focused and the use and limitations of these techniques for the detailed analysis of memristive elements are discussed.
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