Abstract
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
Highlights
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents
Resistive switching and memristive-type devices are of interest for adaptable electronics and high density, low-power memory applications, including alternative computing paradigms such as in-memory computing and neuromorphic computing[1,2,3,4,5,6,7,8,9]
Del Valle et al have shown that the resistance values of vanadium-oxide films grown by RF magnetron sputtering on sapphire substrates can be tuned by electric field pulses, attributed to Joule heating effects when the pulses are applied at a temperature just below the MIT and by filamentary changes in the crystallographic configurations when the pulses are applied at considerably lower temperatures[25]
Summary
The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. Resistive switching of the ‘valence-change mechanism’ type has typically been studied in metal-insulator-metal capacitor structures and reported in various binary and ternary metal oxides[1,3,14] In these systems, ionic movement (mostly of oxygen vacancies) leads to electronic changes through formation of conducting filaments within the insulating matrix and/or by alteration of the transport properties of the interfaces between the oxides and the metal electrodes. An attractive approach in the quest for memristive circuitry - circumventing the need for ionic transport - is the exploration of hysteretic metal-to-insulator (MIT) transitions in Mott insulators such as VO2 and NbO25,11,20 In such Mott insulators, large resistance changes can be achieved e.g., through Joule heating near the MIT temperature or by carrier doping using electric field gating[5,21,22]. We extend the range of deposition techniques and substrate materials
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