Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Abstract

Organic material-based computer memory devices are critical for lowering the amount of electronic waste. Toward this end, we here present the resistive switching property of metal-insulator-metal type devices consisting of active layers made of raw organic cow milk. Our devices were made up of fat-free, medium cream, and full cream raw cow milk active layers sandwiched between indium-doped tin oxide and silver electrodes. These devices were created without the use of heat or electricity, and because they use cow milk as their active layers, they do not pollute the environment. The medium-fat milk film had a higher weight percentage of metallic ions than the fat-free and full-cream milk films, according to energy-dispersive X-ray spectroscopy analysis of the active layers. As a result, electrical characterization and memory studies revealed that conductive filaments driven by a space-charge-limited conduction mechanism were responsible for the “S-type” memory characteristics of the medium-fat milk-based device, with switching at remarkably low VSET=+0.48V and VRESET=−0.25V. Furthermore, with over 30 write/erase cycles, this device demonstrated better non-volatile computer memory device prospects. Hoping conduction-driven conductive filaments, on the other hand, were linked to the behavior of devices that use fat-free and full-cream milk. Overall, our findings show that the fat and ion content of milk plays an important role in the morphology, transport, and switching of these devices.