Resistive switching of self-assembly stacked h-BN polycrystal film

Abstract

Two-dimensional materials resistive random-access memories (RRAMs) are known to exhibit excellent nonvolatile resistive switching (NVRS) performance. However, most two-dimensional materials are produced as monocrystal films with little attention paid to their stacked, discontinuous, and loose polycrystal states, which may allow for more facile atomic diffusion. Here, we propose a liquid-phase self-assembly (LPSA) method to fabricate stacked hexagonal boron nitride (h-BN) polycrystal film (SHPF) and demonstrate its NVRS behavior. Three device architectures with different electrodes are studied, all of which exhibit resistive switching behaviors. The Al/h-BN/Pt device shows 120 current-voltage (I-V) sweeps without degradation, and the Al/h-BN/ITO device exhibits an on/off ratio of ∼10 4 . The proposed LPSA method can serve as a facile and low-cost way to fabricate memory materials on arbitrary substrates. Moreover, stacked, discontinuous, and loose polycrystal film can facilitate the study of NVRS, which opens up an additional avenue for many potential functional applications. • Stacked h-BN polycrystal film (SHPF)-based RRAM is studied • Record nonvolatile resistance switching (NVRS) is observed in SHPF • Reliable NVRS with 120 cycles of endurance and on/off ratio as high as ∼10 4 • SHPF is realized by facile and low-cost self-assembly with no limit from substrate Sun et al. develop a method for fabricating large-area 2D-material film on arbitrary substrate and study the resistive switching of stacked polycrystal h-BN film. The devices show excellent nonvolatile-resistive-switching performance, and the study provides an alternative approach for 2D-material fabrication and applications.