Resistive switching of reactive sputtered TiO2 based memristor in crossbar geometry

Abstract

In this work, TiO2 based metal/metal oxide/metal memristor structures are investigated using I–V–t measurements. TiO2 films are deposited to pre-patterned area using a lift-off technique. Bottom and top metallization are done using Pt and Ti RF-sputtering, and 10nm thick active TiO2 layer is grown by reactive RF sputter at room temperature. Amorphous film formation is observed by XRD measurements. Initial high resistance state-of-films lead us to fabricate memristors in matrix form using photolithography. We note that although measurements carried out at room temperatures demonstrated a well-pinched behavior, during the continuous loop the resistance of structure under the test steadily increased after each scanning polarity change. A step-like resistance change is observed by application of periodic DC pulses. This change was step like for the first 20s. time duration but turned to a random manner for the prolonged time.