Resistive Switching of Memristors Based on (Co40Fe40B20)x(LiNbO3)100 – x Nanocomposite with a LiNbO3 Interlayer: Plasticity and Time Characteristics

Abstract

The resistive switching (RS) of metal/nanocomposite/metal (M/NC/M) memristive structures based on the (Co40Fe40B20)x(LiNbO3)100 – x nanocomposite with a ferromagnetic alloy content х ≈ 8–20 at % is studied. The structures were synthesized by ion beam sputtering with an increased oxygen content (≈2 × 10–5 Torr) at the initial stage of NC growth, as a result of which a thin (15–18 nm) LiNbO3 layer appears at the bottom electrode. It is found that the structures have multilevel character of RS (at least four levels) with the retention time of the emerging resistive states of more than 104 s and demonstrate the possibility of the resistive states change according to biosimilar rules such as spike-timing-dependent plasticity (STDP). Unusual kinetics of RS to the low-resistance state was found: RS occurs with a delay of about 70 μs; the RS time in this case reaches ~5 ns, and the energy consumption for switching is ~1 nJ.