Resistive Switching of GaAs Oxide Nanostructures

Vadim Avilov,Roman Tominov,Nikita Polupanov,Vladimir Smirnov,Maxim Solodovnik,Boris Konoplev,Oleg Ageev

doi:10.3390/ma13163451

Abstract

The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 1017 cm−3. X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga2O3 and As2O3, and the thickness of the Ga2O3 layer is 2–3 times greater than the thickness of As2O3 area—i.e., the oxidized GaAs region consists mainly of Ga2O3. The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage Uset from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.

Highlights

Nanotechnology in electronics has become one of the most promising areas of research that can bring significant progress in the development of new generation devices [1,2,3]
There is a wide range of such methods, each of which has its own advantages and disadvantages associated with productivity, processing area, cost, etc., and cannot be considered ideal and generally accepted [14]
The paper presents the results of the fabrication of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structure of GaAs by local anodic oxidation

Summary

Introduction

Nanotechnology in electronics has become one of the most promising areas of research that can bring significant progress in the development of new generation devices [1,2,3]. The physical implementation of non-volatile resistive access memory (ReRAM) has made great progress in the development of new generation computer memory and neuromorphic systems [4,5]. It is important to note that the manufacture of memristor structures is associated with the development and study of methods for modifying the substrate surface with high reproducibility and spatial resolution, including at the prototyping stage. In this case, methods that do not require labor-intensive technological operations associated with the preparation of special patterns and the application of resistive masks are of particular interest. There is a wide range of such methods (nanoimprinting [8,9], electron beam lithography [10,11], focused ion beams [12,13]), each of which has its own advantages and disadvantages associated with productivity, processing area, cost, etc., and cannot be considered ideal and generally accepted [14]

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Conclusion