Abstract
In this work, we have formed CuO memristive array embedded into porous SiO2 layer. Such an approach would create synaptic system on silicon substrate using standard integrated electronics operations. It also provides control over the geometric parameters of artificial synapses, which determines their synaptic weights. The results of synaptic behavior have shown that the value of synaptic weights and currents are dependent on the thickness of the CuO filled SiO2 porous layer.
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