Abstract
Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications. Multiple physical mechanisms underpin the non-volatile switching process and are ultimately believed to give rise to the formation and dissolution of a discrete conductive filament within the active layer. However, a detailed nanoscopic analysis that fully explains all the contributory events remains to be presented. Here, we present aspects of the switching events that are correlated back to tunable details of the device fabrication process. Transmission electron microscopy and atomically resolved electron energy loss spectroscopy (EELS) studies of electrically stressed devices will then be presented, with a view to understanding the driving forces behind filament formation and dissolution.
Highlights
The need for enormous data density and non-volatile storage has been the motivation behind the development of new memory materials and design concepts [1]
In this work we present preliminary results of electrically stressed zirconium oxide (ZrO2) based memristors deposited via pulsed laser deposition (PLD) in an effort to shed some light on some of the resistive switching phenomena
This insertion layer oxidation is likely to enhance the reduced zirconium conductive filament (CF) formation and explain the enhanced BRS observed. Another interesting observation lies in the fact that the active layer/active electrode interface
Summary
The need for enormous data density and non-volatile storage has been the motivation behind the development of new memory materials and design concepts [1]. Much work has been done with resistive switching systems in general, a complete model that describes all known switching phenomena is still lacking and in many ways, recent progress has outpaced a detailed understanding [5] This is true for the case of memristors based on tantalum and hafnium oxides, which are commercially available despite the fact that the underlying physics of resistive switching is still under debate [6,7,8]. It is known that ReRAM relies on electrically induced ion migration in the metal-oxide layers of TaOx, TiOx, ZrOx and HfOx systems [1,2,3,4] In these systems a conductive filament (CF) is formed (after an initial electroforming step) by local chemical reduction of an insulating oxide layer located between two contacts [1]. In this work we present preliminary results of electrically stressed zirconium oxide (ZrO2) based memristors deposited via pulsed laser deposition (PLD) in an effort to shed some light on some of the resistive switching phenomena
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