Abstract
Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2 nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2 nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2 nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.
Highlights
Investigation of switching behavior of several metal oxides, which may have their resistance states modulated by voltage applied to or by the current flowing through them, is nowadays a growing research field motivating researchers and engineers to develop high-speed low-power nanodimensional non-volatile Resistive Random Access Memory (ReRAM) devices
The filament is composed of a substoichiometric crystalline phase of the metal oxide, a Magnéli phase [6], formed due to the high temperatures achieved during the local heating [7]
TiO2 nanocolumn arrays grown at modified electrochemical conditions are currently under investigation; the results to be reported in due course
Summary
Investigation of switching behavior of several metal oxides, which may have their resistance states modulated by voltage applied to or by the current flowing through them, is nowadays a growing research field motivating researchers and engineers to develop high-speed low-power nanodimensional non-volatile Resistive Random Access Memory (ReRAM) devices. In such devices, a layer of metal oxide is usually sandwiched between two metallic electrodes for obtaining metal/semiconductor/metal structures. This motivated our efforts to incorporate arrays of TiO2 nanocolumns prepared via the porous-anodic-alumina (PAA)-assisted anodizing [8,9] into a 3-D solid-state microdevice and investigate their electrical transport properties. We incorporate the arrays into metal/semiconductor/metal microdevices by electrochemically depositing top gold electrodes and measure their room-temperature current-voltage behavior, revealing the right combination of electrolytic conditions appropriate for the occurrence of bipolar resistive switching in the anodic films
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