Abstract
Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500 °C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science.
Highlights
The development of information technologies requires devices for storing and processing huge amounts of information
In 1971, Leon Chua theoretically predicted the existence of the fourth element of electronics: a memory resistor, called a memristor [2]
The memristor effect is based on the controlled switching of dielectrics to high and low resistance states (HRS and low resistance resistancestate state (LRS), respectively)
Summary
The development of information technologies requires devices for storing and processing huge amounts of information. The important advantage of non-stoichiometric germanosilicate glasses (GeSix Oy solid alloys) are that the technology of their deposition is simple, inexpensive, and fully compatible with modern silicon technology [18] These films are interesting because they contain charge traps of various types. There has been an increasing interest in materials with a low enthalpy of bonds between an atom of the fourth group of the periodic table of elements and an oxygen atom for the formation of memristors. This is because an easier formation of conductive filaments and their easier rupture in such materials are assumed. Multilevel resistance states in nanoscale neuromorphic devices with retention time satisfaction can be used as prospective artificial synapses [20]
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