Resistive switching in mesoscopic heterostructures based on Nd2–x Ce x CuO4–y epitaxial films

N A Tulina,A M Ionov,I Yu Borisenko,I M Shmytko,R N Mozhchil’,A A Ivanov,A N Rossolenko

doi:10.1134/s1063739717030106

Resistive switching in mesoscopic heterostructures based on Nd2–x Ce x CuO4–y epitaxial films

N A Tulina, A M Ionov + Show 5 more

https://doi.org/10.1134/s1063739717030106

Copy DOI

Journal: Russian Microelectronics	Publication Date: May 1, 2017
Citations: 1

Affiliation: Institute of Solid State Physics, Institute of Microelectronics Technology and High Purity Materials

#Nd2 xCexCuO4 #Schottky-like Barriers + Show 8 more

Abstract
Full-Text
Similar Papers

Abstract

Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–x Ce x CuO4–y /Nd2–x Ce x O1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–x Ce x O1.75, deficient in oxygen, epitaxially germinated at the Nd2–x Ce x CuO4–y surface.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

More From: Russian Microelectronics

Paper Title

Journal

Date

Author

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.