Abstract
Abstract We prepared Pt/HfO 2 /TiN metal–insulator–metal structures for resistive switching experiments. The HfO 2 films were prepared by thermal, ozone and plasma assisted atomic layer deposition. The deposition techniques yielded HfO 2 films that were conducive to stable and reproducible bipolar resistive switching. We observed that the forming voltage scaled with the HfO 2 film thickness. The structures did not show degradation after 10 4 consecutive resistive switching operations in a millisecond pulsed regime.
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