Abstract
We have grown a single oriented GdK2Nb5O15 ferroelectric thin film with tetragonal tungsten bronze (TTB) structure by pulsed laser deposition on SrRuO3/La0.5Sr0.5CoO3 bi-buffered MgO substrate. GKN thin film exhibits a single phase and (00ℓ)-orientation with tall and narrow asperities. We study as the first time the resistive switching in a TTB thin film. Room temperature electrical properties were investigated in the capacitance shape, using Pt top electrodes, and revealed a significant current hysteresis making GdK2Nb5O15 as a potential candidate for resistive memory devices.
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