Abstract
In this letter, we describe resistive switching and gap narrowing using nanogap electrodes fabricated by electroless gold plating. Resistive switching was observed using these nanogap electrodes, and gap narrowing was caused by applying low bias voltages that were below the operation voltages for resistance switching. The results indicate that nanogap electrodes with small gap widths could lower the voltage of the narrowing operation. Moreover, because the electroless gold plating method is a very promising technique for the mass production of nanogaps, this method is useful for application to nanogap devices.
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