Abstract
Display Omitted HighlightsWe examine the post breakdown characteristics of metal gate/Al2O3/InGaAs.It is observed resistive switching (RS) effect.The oxide-substrate interface is studied by X-ray photoelectron spectroscopy spectra.The As-O bonds are responsible for large frequency deviations and the RS effect. The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
