Abstract
Resistive switching (RS) has been studied for several applications such as information storage and bio-inspired computing, although reliability issues still prevent their massive use. In this work, we present a novel observation of trapping activity that imposes giant random conductance fluctuations, up to 3 orders of magnitude, resembling RTN in RS devices based on TiO2, HfO2 and hexagonal boron nitride (h-BN) under reading voltages (~ 0.1 V). These events appeared reproducible for all the aforementioned RS device types in sequential measurements and under different bias. This behavior is very beneficial to ensure recognition of the device’s two-state in applications such as stochastic computing integrated circuits (ICs).
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