Abstract
In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I–V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of each case, statistical analysis is presented. In each case, the average value and the relative standard deviation (RSD) of resistance are calculated to analyze the characteristics of the distribution. The best variability is observed at higher CC (5 mA). In addition, we validated the non-volatile properties of the device using the retention data for each of the CCs. Based on this comparison, we proposed the most appropriate CC of the device operation. Also, a pulse was applied to measure the current waveform and demonstrate the regular operation of the device. Finally, the resistance of LRS and HRS states was measured by pulse. We statistically compared the measured pulse data with the DC data.
Highlights
The demand to meet artificial intelligence (AI) technology for memory devices with high density and fast latency continues to intensify
I-V curves were analyzed to investigate operating voltage ranges for each compliance currents (CCs)
Set voltages showed no significant difference in all three cases, with variation being the only difference
Summary
The demand to meet artificial intelligence (AI) technology for memory devices with high density and fast latency continues to intensify. A RRAM device consists of a metal-insulator-metal (MIM) structure It has the characteristics of maintaining a low resistance state (LRS) at a specific voltage range and a high resistance state (HRS) at a different voltage range. The process of changing the state of a device to LRS is called ‘set,’ and the process of switching to HRS is called ‘reset.’ Set and reset processes are based on the phenomenon in which conducting filaments (CF) form or disappear inside the insulator between the top electrode (TE) and bottom electrode (BE). Excessive CF could not disappear in any case, and switching may not be possible To prevent this phenomenon, CC should be applied to the device during the set process. The reset process implies a state transition from LRS to HRS, so CC is not required
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