Abstract
We fabricated resistive random access memory (RRAM) devices with Titanium doping HfO2 as the switching layer by magnetron sputtering and lithography technology. Resistive switching (RS) characteristics of HfTiO memory devices annealed under N2 and O2 ambient were investigated in this work. It was found that the improved RS properties were obtained in N2 annealing atmosphere, which showed larger RS window as well as improved uniformity for the RS parameters, while the device in O2 annealed atmosphere was the opposite. To clarify the effect of annealing treatment on the devices in various atmospheres, X-ray photo spectra and conduction mechanism, which are related to the RS properties were analyzed. It can be induced the increase of oxygen vacancies in the switching layer by N2 annealing treatment, which was benificial to the connection/ rupture of the conductive filament, was the main reason for the improvement of RS characteristics.
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