Abstract
As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). A high-temperature in-situ route was employed to synthesis CN-MOS composite where thiourea and manganese chloride was used as the precursor. The electrical property of the CN-MOS composite system (active layer), sandwiched between two gold electrodes, was measured under different sweeping (voltage) conditions. The device displayed different types of switching patterns, unipolar, and bipolar, by changing the sweep direction. The CN-MOS based device also exhibited good endurance and memory retention performances for the period of 104 cycles and 104 s, respectively, for both the polarities.
Highlights
As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN)
Bilayer heterostructured device made with manganese oxide and indium-gallium-zinc oxide was reported for volatile and multistate nonvolatile resistive switching memory applications
The resistive switching performance of MnO-based Resistive random access memory (ReRAM) was reported for nonvolatile resistance memory applications with Pt–Pt and Pt–Al electrode systems where the Pt–Al electrode system exhibited better endurance
Summary
As part of a program to investigate the materials for resistive random access memory (ReRam) applications, a study has been conducted using embedded manganese oxysulfide (MOS) nanoparticles on the thin film of carbon nitride (CN). Resistive switching property of manganese oxide and hafnium oxide based double-layer film exhibited bipolar resistive switching with a forming-free behavior. The resistive switching performance of MnO-based ReRAM was reported for nonvolatile resistance memory applications with Pt–Pt and Pt–Al electrode systems where the Pt–Al electrode system exhibited better endurance. Both the devices displayed nonpolar resistance switching phenomenon by the formation and rupture of conductive filaments where the switching between HRS and the LRS was achieved under both DC-sweeping and pulse voltage conditions[16]. Manganese based intermetallic compound (Pr0.7Ca0.3MnO3) showed electric-field-induced resistance switching where space-charge-limited-current and Poole–Frenkel were followed as the main conduction mechanism[17]
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