Abstract
In this paper, intrinsic nanocrystalline silicon thin films were deposited onto the ITO/glass substrates by PECVD and were used as the conduction material for the conductive-bridging random-access memory devices. The resistive switching characteristics of the nanocrystalline silicon thin films were investigated. Experimental results have shown that the stable bipolar resistive switching of the nc-Si films and retention time over 104s. In addition, the current conduction mechanism of the nanocrystalline silicon films was examined with XPS depth file analysis. It clearly indicates that the conduction mechanism for the resistive switching is formation metallic bridges come form metal cation migration in the nanocrystalline silicon films.
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