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Abstract
We clarified that the resistive switching phenomenon in transition metal oxides occurs via a redox reaction and that, in a broad sense, the phenomenon is not restricted to oxygen migration. In this study, hydrogen ions were efficiently introduced into single-crystal Bi2Sr2CaCu2O8+δ (Bi-2212) with the assistance of Pt catalyst. Resistive switching was demonstrated to occur such that the relation between the polarity of the applied voltage and the resultant resistance change was opposite to that observed in Bi-2212 with no hydrogen introduction. The characteristics of the resistive switching caused by the migration of hydrogen ions were evaluated and, as a result, high suitability to multi-bit applications as well as low energy consumption and operation faster than that of oxygen ions were confirmed.
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